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| D G S TO-247 ARF463A ARF463B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. * Specified 125 Volt, 81.36 MHz Characteristics: * Output Power = 100 Watts. * Gain = 15dB (Class AB) * Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS ID VGS PD RJC TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case * Low Cost Common Source RF Package. * Low Vth thermal coefficient. * Low Thermal Resistance. * Optimized SOA for Superior Ruggedness. All Ratings: TC = 25C unless otherwise specified. ARF463A/B UNIT Volts Amps Volts Watts C/W C 500 9 30 180 0.70 -55 to 150 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage 1 MIN TYP MAX UNIT Volts 500 5.0 25 A (I D(ON) = 4.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 4.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 250 100 4 3 6 5 nA mhos Volts 6-2003 050-5998 Rev B CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP ARF463A/B MAX UNIT 1200 140 9 5.1 4.1 12.8 4 1600 200 12 10 8 20 8 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 81.36 MHz Idq = 50mA VDD = 125V MIN TYP MAX UNIT dB % 13 60 15 65 Pout = 100W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 3000 Class C VDD = 150V Pout = 150W CAPACITANCE (pf) Ciss 1000 500 Coss 100 50 15 10 5 Crss 0 30 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 10 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 12 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 36 TJ = -55C OPERATION HERE LIMITED BY RDS (ON) 100uS 10 8 10 5 1mS 6 TJ = +25C 10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE .1 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 100mS DC 6-2003 4 2 050-5998 Rev B TJ = +125C 0 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ARF463A/B 1.2 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 25 VGS=15 & 10V 8V 15 6V 5.5V 5V 5 4.5V 4V 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature 0.80 0.70 20 10 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics , THERMAL IMPEDANCE (C/W) 0.9 0.60 0.50 0.40 0.30 0.3 0.20 0.10 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.7 0.5 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC Z JC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 9a, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration RC MODEL Junction temp. ( "C) 0.147 0.00259F 1.0 Power (watts) 0.231 0.00818F 0.321 Case temperature 0.127F Figure 9b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 80 100 Zin () 24 - j 5.0 7.8 - j 11 2.1 - j 6.4 .74 - j 3.3 .30 + j .42 .46 + j 2.0 .87 + j 3.7 ZOL () 55 - j 4.8 41 - j 24 23 - j 26.2 13.6 - j 22 6.1 - j 14.2 4.2 - j 10.7 2.7 - j 7.1 Zin - Gate shunted with 25!! IDQ = 50mA ZOL - Conjugate of optimum load for 100 Watts output at Vdd = 125V 050-5998 Rev B 6-2003 ARF463A/B L4 C5 Bias 0 - 12V C7 R1 RF Input L2 C2 L1 DUT C3 R2 C1 L3 C8 + 125V C6 RF Output C4 C5 C1 -- 820pF Unelco mounted at gate lead C2-C5 -- Arco 463 Mica trimmer C5-C8 -- 10nF 500V COG chip L1 -- 3t #18 .3" ID .25"L ~50nH L2 -- 3t #16 AWG .25" ID .3"L ~58nH L3 -- 10t #18 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R2 -- 50 Ohm 1/2W Carbon DUT = ARF463A/B 81.36 MHz Test Circuit HAZARDOUS MATERIAL WARNING TO-247 Package Outline Top View 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Source 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 6-2003 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 050-5998 Rev B APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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